ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,622, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Non-volatile memory device and system includ... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,623, issued on June 23, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Semiconductor device and method of manufacturing semicon... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,624, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Method of forming a memory cell hav... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,625, issued on June 23, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device and data storage system... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,626, issued on June 23, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "MRAM circuit and layout" was invented by Ti... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,627, issued on June 23, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Memory device and method of forming... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,628, issued on June 23, was assigned to Kioxia Corp. (Tokyo). "Nonvolatile semiconductor storage device and manufacturing method" was inven... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,629, issued on June 23, was assigned to ETRON TECHNOLOGY INC. (Hsinchu, Taiwan). "3D IC structure" was invented by Chao-Chun Lu (Hsinchu, T... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,630, issued on June 23, was assigned to ROHM Co. LTD. (Kyoto, Japan). "Semiconductor device" was invented by Masahiko Arimura (Kyoto, Japan... Read More
ALEXANDRIA, Va., July 15 -- United States Patent no. 12,666,631, issued on June 23, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Decoupling FinFET capacitors" w... Read More